Infineon IPA083N10N5: A High-Performance OptiMOS 5 Power MOSFET for Efficient Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. At the forefront of this evolution is Infineon's OptiMOS™ 5 technology, a benchmark in low-voltage power MOSFETs. The IPA083N10N5, a prime exemplar of this series, is engineered to set new standards in performance for a wide array of power conversion applications.

This 100V N-channel MOSFET is built on an advanced silicon technology that achieves an exceptional balance between low on-state resistance and high switching speed. The standout feature of the IPA083N10N5 is its remarkably low typical R DS(on) of just 0.83 mΩ at 10 V. This ultra-low resistance is pivotal in minimizing conduction losses, which directly translates into higher system efficiency, reduced heat generation, and the potential for smaller heatsinks or simplified thermal management.

Beyond its static performance, the device excels in dynamic operation. The OptiMOS™ 5 technology ensures superior switching characteristics, significantly reducing both turn-on and turn-off losses. This is crucial for high-frequency switching power supplies, where switching losses can dominate overall system inefficiency. The result is the ability to design systems that can operate at higher frequencies, enabling the use of smaller passive components like inductors and capacitors, thereby increasing power density.

The robust design of the IPA083N10N5 also offers a high level of reliability. It features an avalanche ruggedness and is qualified for industrial grades, making it suitable for harsh operating environments. Its low gate charge (Q G ) further enhances its performance by simplifying drive requirements and reducing driving losses.

Typical applications where the IPA083N10N5 proves invaluable include:

High-efficiency switched-mode power supplies (SMPS) for servers and telecom equipment.

Synchronous rectification in DC-DC converters.

Motor control and drives for industrial automation.

Solar inverters and other renewable energy systems.

ICGOOODFIND: The Infineon IPA083N10N5 is a top-tier power MOSFET that encapsulates the benefits of the OptiMOS™ 5 platform. Its industry-leading low R DS(on) and excellent switching performance make it an optimal choice for designers aiming to push the boundaries of efficiency and power density in their next-generation power conversion systems.

Keywords: OptiMOS 5, Low RDS(on), High Efficiency, Power Conversion, Synchronous Rectification