Infineon IPD30N06S4L-23: Key Features and Applications for Power Management Design

The Infineon IPD30N06S4L-23 is a state-of-the-art N-channel power MOSFET engineered to deliver exceptional performance and reliability in modern power management systems. As a member of Infineon’s innovative OptiMOS™ family, this component is specifically designed to meet the growing demand for high efficiency, compact size, and robust thermal performance in a wide array of applications.

A standout feature of the IPD30N06S4L-23 is its extremely low on-state resistance (RDS(on)) of just 2.3 mΩ at a gate-source voltage of 10 V. This remarkably low resistance is critical for minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation. The device is rated for a drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of 100 A, making it a robust solution for handling high power levels. Furthermore, its low gate charge (QG) ensures fast switching capabilities, which is essential for high-frequency switching regulators and helps in reducing switching losses. The component is also housed in a space-saving D2PAK (TO-263) package, offering an excellent power-to-size ratio and simplifying thermal management through its efficient power dissipation.

These characteristics make the IPD30N06S4L-23 an ideal choice for a diverse range of power management applications. It is extensively used in DC-DC conversion systems, such as buck and boost converters found in server power supplies, telecom infrastructure, and industrial power systems. Its high current handling capability also makes it perfect for motor control circuits in automotive applications, including electric power steering (EPS), braking systems, and engine management. Additionally, it is highly effective in synchronous rectification within switch-mode power supplies (SMPS), where its low RDS(on) is crucial for elevating overall power efficiency. The MOSFET is also well-suited for battery management systems (BMS) and load switching in portable devices and power tools.

ICGOOODFIND: The Infineon IPD30N06S4L-23 stands out as a superior power MOSFET, combining ultra-low conduction losses, high current capability, and fast switching performance. Its robust design and versatility make it an indispensable component for engineers aiming to optimize efficiency and reliability in advanced power management designs.

Keywords: Power MOSFET, Low RDS(on), DC-DC Conversion, Motor Control, Synchronous Rectification.